Uniformity and Retention Improvement of TaOx-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering
Uniformity and Retention Improvement of TaOx-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering
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DOI：
10.1109/led.2017.2734907
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发表时间：
2017-09-01
影响因子：
4.9
通讯作者：
Liu, Ming
中科院分区：
文献类型：
--
作者：
Gong, Tiancheng;Luo, Qing;Liu, Ming
均匀性和保持性是电桥随机存储器应用的关键问题。本文在Cu/TaOx/Ru器件中插入自对准CuSiN接口层，获得Cu/CuSiN/TaOx/Ru结构。与Cu/CuSiN/TaOx/Ru器件相比，Cu/CuSiN/TaOx/Ru器件的电阻均匀性和编程电压均匀性明显提高。由于电阻分布紧密，观察到更高的开/关比为1000倍。设定电压的标准差从0.635降至0.187。此外，低阻态保持率也得到了很大的提高。良好地控制了CuSiN界面层引起的阳离子注入和局部化，可以很好地解释均匀性和保留率的提高。
Uniformity and retention are crucial aspects for application of conductive bridge random access memory. In this letter, a self-aligned CuSiN interfacial layer was inserted into Cu/TaOx/Ru device to obtain a Cu/CuSiN/TaOx/Ru structure. Compared with the Cu/TaOx/Ru device, the Cu/CuSiN/TaOx/Ru device shows much improved uniformity of resistance and programming voltage. Higher ON/OFF ratio of 1000x was observed, benefiting from the tight distribution of resistance. The standard deviation of set voltage was minimized from 0.635 to 0.187. Moreover, the low-resistance-state retention was also greatly improved. The uniformity and retention improvement could be well explained by the good controlment of cation injection and localization induced by CuSiN interfacial layer.