Perfluoropentacene: High-performance p-n junctions and complementary circuits with pentacene
Perfluoropentacene: High-performance p-n junctions and complementary circuits with pentacene
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DOI：
10.1021/ja0476258
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发表时间：
2004-07-07
影响因子：
15
通讯作者：
Tokito, S
中科院分区：
文献类型：
--
作者：
Sakamoto, Y;Suzuki, T;Tokito, S
报道了一种用于有机场效应晶体管(OFET)的n型半导体材料全氟戊烯的合成和表征。全氟戊二烯是一种平面和晶体材料，采用人字形结构，就像观察到的并五苯一样。用顶接触几何方法构造了全氟戊烯结构的场效应管，观察到其电子迁移率为0.11cm2V-1s-1。具有全氟并五苯和并五苯的双极型OFET在正负栅极电压下均可工作。改进的p-−-n结可能是由于两个并苯的相似间距所致。制作了互补的逆变器电路，传输特性表现出输出信号的急剧反转和高电压增益。
We report the synthesis and characterization of perfluoropentacene as an n-type semiconductor for organic field-effect transistors (OFETs). Perfluoropentacene is a planar and crystalline material that adopts a herringbone structure as observed for pentacene. OFETs with perfluoropentacene were constructed using top-contact geometry, and an electron mobility of 0.11 cm2V-1s-1was observed. Bipolar OFETs with perfluoropentacene and pentacene function at both negative and positive gate voltages. The improved p−n junctions are probably due to the similard-spacings of both acenes. Complementary inverter circuits were fabricated, and the transfer characteristics exhibit a sharp inversion of the output signal with a high-voltage gain.