Transparent conducting indium-tin-oxide (ITO) film as full front electrode in III-V compound solar cell
Transparent conducting indium-tin-oxide (ITO) film as full front electrode in III-V compound solar cell
复制标题
透明导电氧化铟锡 (ITO) 薄膜作为 III-V 族化合物太阳能电池的全前电极
DOI：
10.1088/1674-1056/26/3/037305
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发表时间：
2017-03-01
影响因子：
1.7
通讯作者：
Yang, Hui
中科院分区：
文献类型：
--
作者：
Dai, Pan;Lu, Jianya;Yang, Hui
提出了在III-V化合物GaInP太阳电池中用透明导电的ITO薄膜代替传统的母线金属电极作为全前电极。在ITO和10 nm N+-GaAs层之间形成了高质量的非整流接触，这得益于Tr掺杂N+-GaAs层的高载流子浓度，高达2×10(19)cm(3)。观察到采用ITO电极的GaInP太阳电池具有良好的器件性能。这一结果表明，透明导电膜在未来制作更大面积的柔性III-V太阳电池方面具有很大的潜力。
The application of transparent conducting indium-tin-oxide (ITO) film as full front electrode replacing the conventional bus-bar metal electrode in III-V compound GaInP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N+-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N+-GaAs layer, up to 2 x 10(19) cm(3). A good device performance of the GaInP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.