Performance of single-junction and dual-junction InGaP∕GaAs solar cells under low concentration ratios
Performance of single-junction and dual-junction InGaP∕GaAs solar cells under low concentration ratios
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DOI：
10.1063/1.1802371
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发表时间：
2004-10
影响因子：
4
通讯作者：
Aurangzeb Khan;M. Yamaguchi;T. Takamoto
中科院分区：
文献类型：
--
作者：
Aurangzeb Khan;M. Yamaguchi;T. Takamoto
研究了单结InGaP∕GaAs和双结InGaP∕GaAs串联电池在低浓度比（高达15个太阳）、1 MeV电子辐照前后的性能。对不同聚光照明下隧道结参数的分析表明，峰值电流（JP）和谷电流（JV）密度应大于短路电流密度（Jsc），以获得较好的性能。辐照后，隧道结对光强的抵抗性能得到改善。这表明辐照后隧道结的峰值电流密度（JP）和谷电流密度（JV）增强或峰值电流向更高浓度偏移。在聚光照射条件下，辐射损伤的恢复表明，即使在低浓度条件下，InGaP∕GaAs串联太阳能电池的性能也可以得到提高。
A study of the performance of single-junction InGaP∕GaAs and dual-junction InGaP∕GaAs tandem cells under low concentration ratios (up to 15 suns), before and after 1 MeV electron irradiation is presented. Analysis of the tunnel junction parameters under different concentrated light illuminations reveals that the peak current (JP) and valley current (JV) densities should be greater than the short-circuit current density (Jsc) for better performance. The tunnel junction behavior against light intensity improved after irradiation. This led to the suggestion that the peak current density (JP) and valley current density (JV) of the tunnel junction were enhanced after irradiation or the peak current was shifted to higher concentration. The recovery of the radiation damage under concentrated light illumination conditions suggests that the performance of the InGaP∕GaAs tandem solar cell can be enhanced even under low concentration ratios.