Characterization of GaAs mesa photodiodes with X-ray and ?-ray photons
Characterization of GaAs mesa photodiodes with X-ray and ?-ray photons
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用 X 射线和 γ 射线光子表征 GaAs 台面光电二极管
DOI：
10.1016/j.nima.2014.04.028
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Barnett A
中科院分区：
文献类型：
--
作者：
Barnett A
结果表明，该器件在4.95keV(V Kα1X-射线荧光)到59.5keV(241Amγ-射线发射)光子能量范围内的光谱性能。这些器件在+33.3°C的非制冷条件下工作，测量到的能量分辨率(全宽度半最大值)在4.95 keV时为780 keV，在59.5 keV时为950 keV；对于直径400µm二极管，其能量分辨率在4.95 keV时为1.08 keV，在59.5 keV时为1.33 keV。半高宽随光子能量的增加而增加，这一现象可以用Fano噪声的能量依赖性来解释，但器件输出的峰值电荷随入射光子能量线性变化(r2200µm=0.99998，r2400µm=0.999998)。
Results characterizing the performance of prototype thin (3 µmilayer) GaAs p+–i–n+mesa photodiodes (one 200 µm diameter and one 400 µm diameter device) are presented showing the spectral performance of the devices at photon energies from 4.95 keV (V Kα1X-ray fluorescence) to 59.5 keV (241Amγ-ray emission). The devices were operated uncooled at +33.3 °C. The energy resolution (full width half maximum) was measured to vary from 780 eV at 4.95 keV to 950 eV at 59.5 keV for the 200 µm diameter diode, and from 1.08 keV at 4.95 keV to 1.33 keV at 59.5 keV for the 400 µm diameter diode. The increased broadening of FWHM with increasing photon energy was found to be greater than can be explained by the expected energy dependence of the Fano noise, but the peak charge output from the devices varied linearly (R2200µm=0.99998,R2400µm=0.999998) with incident photon energy.