Influence of deposition rate on the thermoelectric properties of Sb 2 Te 3 thin films by thermal evaporation method

Influence of deposition rate on the thermoelectric properties of Sb 2 Te 3 thin films by thermal evaporation method
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热蒸发法沉积速率对Sb 2 Te 3 薄膜热电性能的影响

DOI:
10.1155/2015/564954
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发表时间:
2015
影响因子:
--
通讯作者:
Wei Chen
Wei Chen
中科院分区:
材料科学4区
文献类型:
--
作者:
Jyun;Ying;Wei Chen

文献摘要

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热电(TE)材料至关重要,因为它们可以用于发电和冷却设备。sb2te3基化合物在室温下具有优异的性能,是最有利的TE材料。本研究采用热蒸发法在SiO2/Si衬底上制备了Sb2Te3薄膜。研究了蒸发电流对Sb2Te3薄膜微观结构和TE性能的影响。利用x射线衍射和场发射扫描电镜对薄膜的晶体结构和形貌进行了分析。在室温下测量塞贝克系数、电导率和功率因数(PF)。实验结果表明,随着蒸发电流的增大,塞贝克系数增大,电导率减小。当蒸发电流为80a时,Seebeck系数达到最大值387.58µV/K。相反,在室温下,蒸发电流为60 a时,得到了3.57 μ W/cmK2的PF。
Thermoelectric (TE) materials are crucial because they can be used in power generation and cooling devices. Sb2Te3-based compounds are the most favorable TE materials because of their excellent figure of merit at room temperature. In this study, Sb2Te3 thin films were prepared on SiO2/Si substrates through thermal evaporation. The influence of the evaporation current on the microstructures and TE properties of Sb2Te3 thin films were investigated. The crystalline structures and morphologies of the thin films were analyzed using X-ray diffraction and field emission scanning electron microscopy. The Seebeck coefficient, electrical conductivity, and power factor (PF) were measured at room temperature. The experimental results showed that the Seebeck coefficient increased and conductivity decreased with increasing evaporation current. The Seebeck coefficient reached a maximum of 387.58 µV/K at an evaporation current of 80 A. Conversely, a PF of 3.57 µW/cmK2 was obtained at room temperature with evaporation current of 60 A.