A new 2D analytical model of double RESURF in SOI high voltage devices
A new 2D analytical model of double RESURF in SOI high voltage devices
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DOI：
10.1109/icsict.2004.1435019
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发表时间：
2004-10
期刊：
影响因子：
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通讯作者：
Zhaoji Li;Yufeng Guo;Bo Zhang;Jian Fang;Zehong Li
中科院分区：
文献类型：
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作者：
Zhaoji Li;Yufeng Guo;Bo Zhang;Jian Fang;Zehong Li
提出了SOI高压器件中双RESURF的一种新的二维解析模型。基于二维泊松方程，得到了表面场的解析分布。与传统的体硅器件中只考虑硅层的影响不同，本文首次提出了SOI器件单、双RESURFF的统一条件，该条件同时考虑了硅层和埋氧层的影响。根据该模型，讨论了P-顶层的电场降低机理，并给出了一个用于优化漂移区浓度的RESURF掺杂优化区（DOR）。通过数值仿真验证了模型的正确性，并对结构参数进行了优化。最后成功研制出720 V双REURF SOI LDMOS。数值模拟和实验结果表明，支持分析模型。
A new 2D analytical model of the double RESURF in SOI high voltage devices is proposed in the paper. Based on the 2D Poisson equation, an analytical distribution of the surface field is obtained. A unified condition of single and double RESURFF for the SOI device, taking the both influence of the silicon layer and buried oxide layer into account, is developed in the first time, which is different with tradition one of the bulk silicon devices, in which the silicon layer is only considered . According to the model, the electric field reduction mechanism of the P-top layer is discussed, and a RESURF doping optimal region (DOR) for optimizing the drift region concentration is given. Numerical simulations are performed to verify the present model and optimize the structure parameters. As a result, the 720V double REURF SOI LDMOS are manufactured successfully. The numerical simulation and experimental results are shown to support the analytical model.