A divalent rare earth oxide semiconductor: Yttrium monoxide
A divalent rare earth oxide semiconductor: Yttrium monoxide
复制标题
DOI：
10.1063/1.4944330
复制
发表时间：
2016-03
影响因子：
4
通讯作者：
K. Kaminaga;Ryosuke Sei;K. Hayashi;N. Happo;H. Tajiri;D. Oka;T. Fukumura;T. Hasegawa
中科院分区：
文献类型：
--
作者：
K. Kaminaga;Ryosuke Sei;K. Hayashi;N. Happo;H. Tajiri;D. Oka;T. Fukumura;T. Hasegawa
稀土氧化物通常是宽禁带绝缘体，如具有闭壳三价稀土离子的 Y2O3。在这项研究中，采用脉冲激光沉积方法以外延薄膜的形式合成了具有异常价态Y2+（4d1）的固相岩盐结构一氧化钇（YO）。在之前的研究中，YO已被认为是气相。与Y2O3相比，YO是深棕色的窄带隙半导体。可调电导率范围从 10−1 到 103 Ω−1 cm−1 归因于作为电子供体的氧空位的存在。在磁阻中观察到的弱反定域行为表明自旋轨道耦合作为 4d 电子载流子的表现的重要作用。
Rare earth oxides are usually widegap insulators like Y2O3 with closed shell trivalent rare earth ions. In this study, solid phase rock salt structure yttrium monoxide, YO, with unusual valence of Y2+ (4d1) was synthesized in a form of epitaxial thin film by pulsed laser deposition method. YO has been recognized as gaseous phase in previous studies. In contrast with Y2O3, YO was dark-brown colored and narrow gap semiconductor. The tunable electrical conductivity ranging from 10−1 to 103 Ω−1 cm−1 was attributed to the presence of oxygen vacancies serving as electron donor. Weak antilocalization behavior observed in magnetoresistance indicated significant role of spin-orbit coupling as a manifestation of 4d electron carrier.