A Rigorous Approach for the Modeling of Through-Silicon-Via Pairs Using Multipole Expansions
A Rigorous Approach for the Modeling of Through-Silicon-Via Pairs Using Multipole Expansions
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DOI：
10.1109/tcpmt.2015.2497466
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
X. Duan;David Dahl;I. Ndip;K. Lang;C. Schuster
中科院分区：
文献类型：
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作者：
X. Duan;David Dahl;I. Ndip;K. Lang;C. Schuster
本文提出了一种新的多极展开法，用于严格分析波沿通硅通孔（TSV）对的传播。TSV模型通常是在假设不同介质之间的界面是等电位的情况下使用等效电路来构建的。与之相比，所提出的方法是传播模式的严格全波解。它充分利用了柱面波展开函数，精确匹配了金属-绝缘体界面和绝缘体-硅界面的边界条件。在全波有限元求解器上对该方法进行了验证，并在高达100ghz的频率范围内对该方法进行了分析。
This paper presents a novel multipole expansion method for the rigorous analysis of wave propagation along a through-silicon-via (TSV) pair. TSV models are often constructed using equivalent circuits under the assumption that the interfaces between different media are equipotential. In comparison with that, the proposed method is a rigorous full-wave solution of the propagation mode. It takes advantage of cylindrical wave expansion functions and matches the boundary conditions at both the metal-to-insulator and insulator-to-silicon interfaces exactly. The method is validated against a full-wave finite-element method solver, and analysis examples using the method are demonstrated in a frequency range up to 100 GHz.