Electron Hall mobility of n‐GaN
Electron Hall mobility of n‐GaN
复制标题
n-GaN 的电子霍尔迁移率
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
D. K. Gaskill
中科院分区：
文献类型：
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作者：
D. Rode;D. K. Gaskill
众所周知，最近由J.G.Kim，A.C.Frenkel，H.Liu和R.M.Park[App.太棒了。让我们来吧。65，91(1994)]，与未补偿材料的霍尔迁移率的理论计算符合得很好。对于自由电子浓度为7.24×1017 cm−3和1.74×1018 cm−3的样品，计算了霍尔散射因子，并对霍尔效应自由电子浓度数据进行了修正。相应的实验和理论霍尔迁移率分别为760/744和530/543。因此，理论和实验的一致性在2.5%以内。
It is known that recently published electron Hall mobility data by J. G. Kim, A. C. Frenkel, H. Liu, and R. M. Park [Appl. Phys. Lett. 65, 91 (1994)] for cubic GaN at 300 K are in excellent agreement with theoretical calculations of Hall mobility for uncompensated material. The Hall scattering factor is calculated and Hall effect free‐electron concentration data are corrected for samples with free‐electron concentrations of 7.24×1017 cm−3 and 1.74×1018 cm−3. The corresponding experimental/theoretical Hall mobility is 760/744 and 530/543. Hence, agreement between theory and experiment is demonstrated within 2.5%.