Morphological and Electrical Properties of β-Ga2O3/4H-SiC Heterojunction Diodes
Morphological and Electrical Properties of β-Ga2O3/4H-SiC Heterojunction Diodes
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DOI：
10.1007/s13391-021-00297-6
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发表时间：
2021-07
影响因子：
2.4
通讯作者：
Dong-Wook Byun;young-jae lee;Jong‐Min Oh;Michael A. Schweitz;S. Koo
中科院分区：
文献类型：
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作者：
Dong-Wook Byun;young-jae lee;Jong‐Min Oh;Michael A. Schweitz;S. Koo
采用射频溅射法在4 H-SiC衬底上沉积β-Ga 2 O3薄膜，制备了β-Ga 2 O3/4 H-SiC异质结二极管。X射线衍射（XRD）分析表明，在优化溅射功率的条件下，β-Ga 2 O3（02）、（02）和（03）晶面的反射率均有所提高。扫描电子显微镜（SEM）和原子力显微镜（AFM）进行确认晶粒尺寸和分布。薄膜的霍尔迁移率（30.16 cm ~ 2/Vs）和载流子浓度（3.14 × 10 ~（14）cm ~（-3））均为大而均匀的晶粒分布。对于这些薄膜，迁移率和载流子浓度值可以提高高达9%和55%。这些电特性的效果归因于减少晶界散射。异质结二极管的I-V特性沿着和霍尔测量表明，阈值电压和电流密度的提高是由载流子迁移率的显著增强引起的。
ß-Ga2O3/4H-SiC heterojunction diodes were fabricated by depositing β-Ga2O3thin films on 4H-SiC substrates using radio frequency sputtering. X-ray diffraction (XRD) analysis revealed increased reflectivity of β-Ga2O3(02), (02) and (03) crystal planes with optimized sputtering power. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were performed to confirm grain size and distribution. The Hall mobility (30.16 cm2/Vs) and carrier concentration (3.141014cm–3) showed with large and homogeneous grain distribution thin films. For these thin films, mobility and carrier concentration value could improve up to 9% and 55%. The effect of these electrical characteristics was ascribed to reduction of the grain boundary scattering. The I–V characteristics along with Hall measurement of the heterojunction diode suggest that the improvement in the threshold voltage and current density is caused by a substantial enhancement in charge carrier mobility.Graphic abstract