Spectral characteristics of gain-guided semiconductor lasers
Spectral characteristics of gain-guided semiconductor lasers
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DOI：
10.1109/jqe.1983.1071976
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发表时间：
1983-06
影响因子：
2.5
通讯作者：
G. Arnold;K. Petermann;E. Schlosser
中科院分区：
文献类型：
--
作者：
G. Arnold;K. Petermann;E. Schlosser
导出了增益制导激光器激光发射包络谱宽的关系式，该关系式只包含易于测量的参数，如近场和远场、增益宽度和面反射率。对于GaAlAs V槽激光器，通常可以得到光谱宽度\Delta\lambda，与像散因子K有关，\Delta\lambda /K \approx 1…波长为1.3 μm的GaInAsP V沟槽激光器，其光功率为\Delta\lambda /K \approx 3…5 .选a。
A relation for the spectral width of the envelope of lasing emission of gain-guided lasers is derived which contains only parameters that can be easily measured, such as near and far field, gain width, and facet reflectivity. For GaAlAs V -groove lasers, one typically obtains for the spectral width \Delta\lambda , in relation to the astigmatism factor K , a \Delta\lambda/K \approx 1 ... 2 A at 5 mW optical power, while GaInAsP V -groove lasers at 1.3 μm exhibit a \Delta\lambda/K \approx 3 ... 5 A.