Selective area nucleation for metal chemical vapor deposition using focused ion beams
Selective area nucleation for metal chemical vapor deposition using focused ion beams
复制标题
使用聚焦离子束进行金属化学气相沉积的选择性区域成核
DOI：
10.1116/1.584189
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发表时间：
1988
影响因子：
1.4
通讯作者：
T. Mayer
中科院分区：
文献类型：
--
作者：
R. Kubena;F. P. Stratton;T. Mayer
在热化学气相沉积过程中，利用聚焦的Ga+束选择性地提高成核位密度，证明了金属线在硅片上的局域化生长。当离子线剂量在4×10~(10)~4×10~(12)Ga~+/cm之间时，形成了厚度达2μm的铁线和铝线。因此，这一过程的灵敏度可以比在室温下进行的离子束诱导聚合技术高出几个数量级。俄歇分析表明，金属线深处的总杂质浓度约为15%。在沉积的薄膜中没有检测到Ga。
Localized growth of metal lines on Si wafers has been demonstrated using a focused Ga+ beam to selectively enhance the nucleation site density during a thermal chemical vapor deposition process. Iron and aluminum lines with thicknesses up to 2 μm have been formed using ion line doses between 4×1010 and 4×1012 Ga+/cm. Thus, the sensitivity of this process can be several orders of magnitude greater than ion beam induced polymerization techniques performed at room temperature. Auger analysis indicated that the total impurity concentration deep within the metal lines was roughly 15%. No Ga was detected in the deposited films.