Synaptic activity-responsive element (SARE): A unique genomic structure with an unusual sensitivity to neuronal activity.

Synaptic activity-responsive element (SARE): A unique genomic structure with an unusual sensitivity to neuronal activity.
复制标题

DOI:
10.4161/cib.3.5.12287
复制
发表时间:
2010-09-01
影响因子:
--
通讯作者:
Bito, Haruhiko
Bito, Haruhiko
中科院分区:
其他
文献类型:
--
作者:
Inoue, Masatoshi;Yagishita-Kyo, Nan;Bito, Haruhiko

文献摘要

被引文献

相似文献

新记忆的形成需要突触水平的可塑性。然而,也有研究表明,这种新记忆的巩固和维持涉及细胞核中活性 mRNA 的必要过程。突触功效的强劲变化如何特异性驱动新基因转录本的新转录和翻译,从而将短暂的可塑性转变为持久且稳定的可塑性?在本文中,我们重点介绍了通过发现有效的突触活动响应元件 (SARE) 所获得的概念性进展,该元件位于神经元立即早期基因 Arc 的转录起始位点上游 7 kb 处。 SARE 独特的基因组结构在 100 bp 的基因座内包含三个主要活性依赖性转录因子的相邻且协同的结合位点,与对神经元刺激的异常反应相关。总而言之,这些发现揭示了一种新型转录传感器,其对突触活动的敏感性增强。
Formation of a new memory requires plasticity at the synaptic level. However, it has also been shown that the consolidation and the maintenance of such a new memory involve processes that necessitate active mRNA at the nucleus of the cell. How can robust changes in synaptic efficacy specifically drive new transcription and translation of new gene transcripts, and thus transform an otherwise transient plasticity into a long-lasting and stable one? In this article, we highlight the conceptual advance that was gained by the discovery of a potent Synaptic Activity-Responsive Element (SARE) found 7 kb upstream of the transcription initiation site of the neuronal immediate early gene Arc. The unique genomic structure of SARE, which contained adjacent and cooperative binding sites for three major activity-dependent transcription factors within a 100-bp locus, was associated with an unusual responsiveness to neuronal stimuli. Taken together, these findings shed light on a new class of transcriptional sensor with enhanced sensitivity to synaptic activity.