Control of Nanostructures and Interfaces of Metal Oxide Semiconductors for Quantum-Dots-Sensitized Solar Cells
Control of Nanostructures and Interfaces of Metal Oxide Semiconductors for Quantum-Dots-Sensitized Solar Cells
复制标题
量子点敏化太阳能电池金属氧化物半导体纳米结构和界面的控制
DOI：
10.1021/acs.jpclett.5b00301
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发表时间：
2015
影响因子：
5.7
通讯作者：
Cao Guozhong
中科院分区：
文献类型：
--
作者：
Tian Jianjun;Cao Guozhong
纳米结构的金属氧化物半导体（MOS），如TiO 2和ZnO，由于其大的比表面积可以负载大量的量子点（QD）和强的散射效应可以捕获足够比例的光子，被认为是量子点敏化太阳能电池（QDSC）的一种有吸引力的材料。然而，这种纳米结构的大表面积也为电荷复合提供了容易的途径，并且相邻纳米颗粒之间的表面缺陷和连接可能阻碍有效的电荷注入和电荷传输，导致功率转换效率的损失。对MOS或量子点进行表面修饰是提高量子点DSC性能的有效途径。本文综述了量子点源电池在纳米结构和界面控制方面的最新研究进展，并展望了量子点源电池在提高能量转换效率方面的发展前景。
Nanostructured metal oxide semiconductors (MOS), such as TiO2and ZnO, have been regarded as an attractive material for the quantum dots sensitized solar cells (QDSCs), owing to their large specific surface area for loading a large amount of quantum dots (QDs) and strong scattering effect for capturing a sufficient fraction of photons. However, the large surface area of such nanostructures also provides easy pathways for charge recombination, and surface defects and connections between adjacent nanoparticles may retard effective charge injection and charge transport, leading to a loss of power conversion efficiency. Introduction of the surface modification for MOS or QDs has been thought an effective approach to improve the performance of QDSC. In this paper, the recent advances in the control of nanostructures and interfaces in QDSCs and prospects for the further development with higher power conversion efficiency (PCE) have been discussed.