Epitaxial niobium nitride superconducting nanowire single-photon detectors

Epitaxial niobium nitride superconducting nanowire single-photon detectors
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外延型氮化铌超导纳米线单光子探测器

DOI:
10.1063/5.0018818
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发表时间:
2020-09-28
影响因子:
4
通讯作者:
Tang, Hong X.
Tang, Hong X.
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Cheng, Risheng;Wright, John;Tang, Hong X.

文献摘要

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用于单光子探测器的超导纳米线已在非晶或多晶薄膜上实现。在此,我们报道了首次将单晶氮化铌(NbN)薄膜用于超导纳米线单光子探测器(SNSPDs)。通过分子束外延(MBE)在高温下在近乎晶格匹配的蓝宝石上氮化铝(AlN-on -sapphire)衬底上生长,NbN薄膜呈现出高度的均匀性和一致性。即使薄膜相对较厚,所制备的纳米线探测器在近红外波长下也显示出饱和的内量子效率,这表明了通过分子束外延生长的NbN在实现大规模片上SNSPD阵列以及与基于氮化铝的二阶非线性量子光子电路集成方面的潜力。
Superconducting nanowires used in single-photon detectors have been realized on amorphous or poly-crystalline films. Here, we report the first use of single-crystalline NbN thin films for superconducting nanowire single-photon detectors (SNSPDs). Grown by molecular beam epitaxy (MBE) at high temperature on nearly lattice-matched AlN-on-sapphire substrates, the NbN films exhibit a high degree of uniformity and homogeneity. Even with relatively thick films, the fabricated nanowire detectors show saturated internal efficiency at near-IR wavelengths, demonstrating the potential of MBE-grown NbN for realizing large arrays of on-chip SNSPDs and their integration with AlN-basedchi( 2 ) quantum photonic circuits.