Crystallization-induced stress in thin phase change films of different thicknesses
Crystallization-induced stress in thin phase change films of different thicknesses
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DOI：
10.1063/1.3040314
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发表时间：
2008-12-01
影响因子：
4
通讯作者：
Thompson, Carl V.
中科院分区：
文献类型：
--
作者：
Guo, Qiang;Li, Minghua;Thompson, Carl V.
我们通过测量微悬臂梁的挠度，研究了相变薄膜（Ge2Sb2Te5）中结晶诱导应力与厚度以及有无盖层的关系。应力随膜厚的减小而增大。较薄的介质封盖层与未封盖的薄膜相比，导致应力进一步增加。这一观察结果可以解释为在封盖层的存在下，相变膜中的应力松弛受到抑制。随着相变存储单元尺寸的减小，高应力会影响器件的性能。
We have studied crystallization-induced stress in phase change films (Ge2Sb2Te5) as a function of thickness and with and without a capping layer, by measuring the deflection of microcantilevers. The stress is found to increase with decreasing film thickness. A thin dielectric capping layer leads to a further increase in stress compared to uncapped films. This observation can be explained by the suppression of stress relaxation in the phase change film in the presence of a capping layer. High stress will affect device performance as the size of phase change memory cells decreases.