Structure and tuning properties of sol–gel-derived Pb0.4Sr0.6Zr0.52Ti0.48O3 (PSZT) thin films
Structure and tuning properties of sol–gel-derived Pb0.4Sr0.6Zr0.52Ti0.48O3 (PSZT) thin films
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DOI：
10.1088/0022-3727/40/12/035
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发表时间：
2007-06
期刊：
影响因子：
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通讯作者：
Q. Shao;Aidong Li;Yan Dong;F. Fang;Jianqing Jiang;Zhi-guo Liu
中科院分区：
文献类型：
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作者：
Q. Shao;Aidong Li;Yan Dong;F. Fang;Jianqing Jiang;Zhi-guo Liu
采用溶胶-凝胶法在镀铂硅（Pt/Si）和Nb掺杂SrTiO 3（STO）衬底上制备了Pb 0. 4Sr 0. 6 Zr 0. 52 Ti 0. 48 O3（PSZT 60）薄膜。X射线衍射分析表明，STO上的薄膜具有高度（0 0 1）取向结构，Pt/Si上的薄膜具有多晶结构。针对电调谐应用的PSZT薄膜的介电性能作为温度和电场的函数进行了研究。STO薄膜具有较高的c轴取向度和较大的晶粒尺寸，因此具有较高的居里温度、介电常数和可调谐性。在STO或Pt/Si衬底上的PSZT薄膜在25 - 150 °C的温度范围内显示出弱的温度依赖性可调谐性，这意味着对于实际应用有利的温度稳定性。这些结果表明，PSZT 60薄膜可能是一个潜在的候选材料，为进一步研究电调谐应用。
Pb0.4Sr0.6Zr0.52Ti0.48O3 (PSZT60) thin films were successfully prepared on platinized silicon (Pt/Si) and Nb-doped SrTiO3 (STO) substrates by the sol–gel method. X-ray diffraction characteristics show that the films on STO exhibit highly (0 0 1) oriented structure and the films on Pt/Si have polycrystalline structure. Dielectric properties of PSZT films aimed at electrically tunable applications were investigated as a function of temperature and electric field. The films on STO show higher Curie temperature, larger dielectric constant and higher tunability, due to a highly c-axis orientation and larger grain size. Both the PSZT films on STO or Pt/Si substrates show a weakly temperature-dependent tunability in the temperature range from 25 to 150 °C, implying favourable temperature stability for practical application. These results suggest that the PSZT60 film may be a potential candidate material for further investigation of electrically tunable applications.