Hall effect and infrared absorption measurements on nitrogen donors in 6H‐silicon carbide
Hall effect and infrared absorption measurements on nitrogen donors in 6H‐silicon carbide
复制标题
6H-碳化硅中氮供体的霍尔效应和红外吸收测量
DOI：
10.1063/1.352318
复制
发表时间：
1992
影响因子：
3.2
通讯作者：
S. Leibenzeder
中科院分区：
文献类型：
--
作者：
W. Suttrop;G. Pensl;W. J. Choyke;R. Stein;S. Leibenzeder
采用6H多型的n型碳化硅的霍尔效应和红外吸收测量来研究氮供体的基态和激发态的能量位置。提出了一个施主模型，分配四个系列的吸收线的电子跃迁的三个施主物种驻留在三个不等价的晶格位置（h，k1，k2）。对于六方晶位h上的施主，确定了12.6 meV的谷轨道分裂。对于2p 0、2p±、3p 0和3p±激发态，有效质量近似在实验误差范围内，假设横向和纵向有效电子质量分别为m =（0.24±0.01）m0和m =（0.34±0.02）m0。
Hall effect and infrared absorption measurements of n‐type silicon carbide of the 6H polytype are employed to investigate the energy position of the ground state and excited states of the nitrogen donor. A donor model is proposed that assigns four series of absorption lines to electronic transitions of three donor species residing at three inequivalent lattice sites (h,k1,k2). A valley‐orbit splitting of 12.6 meV is determined for donors on the hexagonal site h. For 2p0, 2p±, 3p0, and 3p± excited states, the effective‐mass approximation is found to hold within experimental errors assuming a transverse and longitudinal effective electron mass of m⊥=(0.24±0.01) m0 and m∥=(0.34±0.02) m0, respectively.