Synthesis and photoresponse of novel Cu2CdSnS4 semiconductor nanorods
Synthesis and photoresponse of novel Cu2CdSnS4 semiconductor nanorods
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DOI：
10.1039/c2jm32034g
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发表时间：
2012-06
影响因子：
--
通讯作者：
Yong Cui;Gang Wang;Daocheng Pan
中科院分区：
文献类型：
--
作者：
Yong Cui;Gang Wang;Daocheng Pan
合成了具有纤锌矿结构的新型半导体Cu2CdSnS4纳米棒，并对其进行了详细的表征。Cu2CdSnS4纳米棒合适的禁带宽度为1.4 eV，具有良好的光响应性能，在低成本薄膜太阳电池中具有很高的应用潜力。
Novel semiconductor Cu2CdSnS4 nanorods with a wurtzite structure have been successfully synthesized and characterized in detail. The suitable band gap of 1.4 eV and photoresponse property of Cu2CdSnS4 nanorods indicate that they have a high potential application in low-cost thin film solar cells.