Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias
Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias
复制标题
DOI：
10.1109/led.2013.2288981
复制
发表时间：
2014-02
影响因子：
4.9
通讯作者：
W. Feng;Chun Meng Dou;M. Niwa;K. Yamada;K. Ohmori
中科院分区：
文献类型：
--
作者：
W. Feng;Chun Meng Dou;M. Niwa;K. Yamada;K. Ohmori
研究了MOSFET中随机电报噪声（RTN）对脉冲栅压（Vg）上升/下降沿漏电流（Id）的影响。我们首次揭示了RTN的存在增加了动态Vg下的Id波动，通过比较有和没有RTN的FET。在变化Vg之前的初始陷阱占用状态（其由RTN轮廓支配）显著影响Vg的上升/下降沿期间的Id值。揭示了动态Vg下不同剖面的RTN对Id的影响，为设计高速电路提供了依据。
The influence of random telegraph noise (RTN) in MOSFETs on drain current (Id) during the rise/fall edges of the pulsed gate voltage (Vg) cycle was investigated. We have revealed for the first time that the existence of RTN increases Id fluctuations under dynamic Vg by making a comparison between FETs with and without RTN. The initial trap occupation states before varying Vg, which are governed by the RTN profiles, significantly affect the Id values during the rise/fall edges of Vg. The revealed effects of RTN with different profiles on Id under dynamic Vg will be useful for designing ultrahigh speed circuits.