Scanning tunnelling microscopy study of initial growth of titanium silicide on Si(111)
Scanning tunnelling microscopy study of initial growth of titanium silicide on Si(111)
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DOI：
10.1016/s0169-4332(98)00017-8
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发表时间：
1998-06
影响因子：
6.7
通讯作者：
K. Ezoe;H. Kuriyama;Takashi Yamamoto;S. Ohara;S. Matsumoto
中科院分区：
文献类型：
--
作者：
K. Ezoe;H. Kuriyama;Takashi Yamamoto;S. Ohara;S. Matsumoto
利用扫描隧道显微镜研究了超高真空条件下硅化钛在Si(111)-7×7表面的初始生长。在室温下，钛原子优先吸附在7×7表面的缺陷部位。Ti的沉积和随后的600℃退火导致了岛状结构和带状结构的形成。在700℃退火时，只观察到带状结构。条状结构平行于[101]，[011]和[11]方向生长，这是7×7单元胞的侧面。条纹状结构为结晶硅化钛。800℃和900℃退火导致硅化钛的团聚。
The initial growth of titanium silicide on Si(111)-7×7 surface has been investigated using scanning tunnelling microscopy in ultrahigh vacuum. At room temperature Ti atoms preferentially adsorb on the faulted sites of 7×7 surface. The deposition of Ti and subsequent annealing at 600°C lead to the formation of islandlike structures and striplike structures. At 700°C annealing, only striplike structures are observed. The striplike structures grow parallel to [101̄], [011̄] and [11̄0] directions, which is the side of 7×7 unit cell. It is suggested that striplike structure is the crystalline titanium silicide. Annealing at 800°C and 900°C leads to the agglomeration of titanium silicide.