Energy-efficient tunneling field-effect transistors for low-power device applications: challenges and opportunities.
Energy-efficient tunneling field-effect transistors for low-power device applications: challenges and opportunities.
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DOI：
10.1021/acsami.0c10213
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发表时间：
2020-09
影响因子：
9.5
通讯作者：
Ghazanfar Nazir;Adeela Rehman;Soojin Park
中科院分区：
文献类型：
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作者：
Ghazanfar Nazir;Adeela Rehman;Soojin Park
传统场效应晶体管（fet）一直被认为是各种器件的基本电子元件。然而，基于场效应管的纳米电子电路并不节能，因为它们需要很大的电源电压来进行开关应用。为了降低标准场效应管的供电电压，人们设计了一类新的场效应管，即隧道场效应管（tfet）。利用基于量子力学的带对带隧道效应，利用器件通道中的载流子输运，而不是传统的热注入。与互补金属氧化物半导体（CMOS）晶体管相比，用薄半导体薄膜或纳米线制造的tfet可以实现100倍的功率下降。因此，使用tfet和CMOS技术一起可以改善集成电路的低功率器件。具有多种电子特性的二维（2D）材料的发现也为凝聚态物理、纳米技术和材料科学打开了新的大门，从而有可能在器件设计和性能方面改进基于tfet的器件。在这篇综述中，全面回顾了表现出不同半导体通道和几何形状的最先进的TFET器件，然后简要讨论了高性能器件发展所面临的挑战。最后，对tfet器件设计和工作效率的改进进行了展望。
Conventional field-effect transistors (FETs) have long been considered a fundamental electronic component for a diverse range of devices. However, nanoelectronic circuits based on FETs are not energy-efficient because they require a large supply voltage for switching applications. To reduce the supply voltage in standard FETs, which is hampered by the 60 mV/decade limit established by the subthreshold swing (SS), a new class of FETs have been designed, tunnel FETs (TFETs). A TFET utilizes charge-carrier transportation in device channels using quantum mechanical based band-to-band tunneling despite of conventional thermal injection. The TFETs fabricated with thin semiconducting film or nanowires can attain a 100-fold power drop compared to complementary metal-oxide-semiconductor (CMOS) transistors. As a result, the use of TFETs and CMOS technology together could ameliorate integrated circuits for low-power devices. The discovery of two-dimensional (2D) materials with a diverse range of electronic properties has also opened new gateways for condensed matter physics, nanotechnology, and material science, thus potentially improving TFET-based devices in terms of device design and performance. In this review, state-of-art TFET devices exhibiting different semiconducting channels and geometries are comprehensively reviewed followed by a brief discussion of the challenges that remain for the development of high-performance devices. Lastly, future prospects are presented for the improvement of device design and the working efficiency of TFETs.