Micromagnetic modeling of domain wall motion in sub-100-nm-wide wires with individual and periodic edge defects
Micromagnetic modeling of domain wall motion in sub-100-nm-wide wires with individual and periodic edge defects
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DOI：
10.1063/1.4937557
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发表时间：
2015-12
期刊：
影响因子：
1.6
通讯作者：
S. Dutta;Saima A. Siddiqui;J. A. Currivan-Incorvia;C. Ross;M. Baldo
中科院分区：
文献类型：
--
作者：
S. Dutta;Saima A. Siddiqui;J. A. Currivan-Incorvia;C. Ross;M. Baldo
降低依赖于磁畴壁运动的器件的切换能量需要将器件缩放到远低于100 nm的宽度，其中纳米线边缘粗糙度（LER）是畴壁钉扎的固有来源。我们调查的影响，周期性和孤立的矩形缺口，三角形缺口，各向异性的变化，和粗糙度测量的图像制作的电线，在次100纳米宽的纳米线与平面内和垂直的磁各向异性，使用微磁建模。钉扎场计算模型的基础上的物理线的离散化图像进行了比较，实验测量。当磁畴壁的宽度小于缺口周期时，磁畴壁速度随着磁畴壁沿导线沿着传播而被调制。我们发现，在子30纳米宽的电线，边缘缺陷决定的工作阈值和畴壁动力学。
Reducing the switching energy of devices that rely on magnetic domain wall motion requires scaling the devices to widths well below 100 nm, where the nanowire line edge roughness (LER) is an inherent source of domain wall pinning. We investigate the effects of periodic and isolated rectangular notches, triangular notches, changes in anisotropy, and roughness measured from images of fabricated wires, in sub-100-nm-wide nanowires with in-plane and perpendicular magnetic anisotropy using micromagnetic modeling. Pinning fields calculated for a model based on discretized images of physical wires are compared to experimental measurements. When the width of the domain wall is smaller than the notch period, the domain wall velocity is modulated as the domain wall propagates along the wire. We find that in sub-30-nm-wide wires, edge defects determine the operating threshold and domain wall dynamics.