Depth analysis of boron diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy
Depth analysis of boron diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy
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DOI：
10.1063/1.3465308
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发表时间：
2010-08
影响因子：
3.2
通讯作者：
Yuan Lu;B. Lépine;G. Jézéquel;S. Ababou;M. Alnot;J. Lambert;A. Renard;M. Mullet;C. Deranlot
中科院分区：
文献类型：
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作者：
Yuan Lu;B. Lépine;G. Jézéquel;S. Ababou;M. Alnot;J. Lambert;A. Renard;M. Mullet;C. Deranlot
用X射线光电子能谱深度分析方法研究了B在MgO/CoFeB双层膜中的扩散。350℃退火后，大量的B(B/mg=0.16)扩散到了氧化镁势垒中。氧化镁中的硼处于高度氧化的B3+状态，在整个势垒中均匀分布。B在MgO中的重要扩散可能与CoFeB晶化过程有关，CoFeB晶化过程从CoFeB/Ru界面下方开始，在退火过程中推动B原子扩散到MgO势垒中。我们用X射线光电子能谱深度分析研究了B在MgO/CoFeB双层膜中的扩散。350℃退火后，大量的B(B/mg=0.16)扩散到了氧化镁势垒中。氧化镁中的硼处于高度氧化的B3+状态，在整个势垒中均匀分布。这种重要的B扩散可能与CoFeB晶化过程有关，CoFeB晶化过程从CoFeB/Ru界面下方开始，在退火过程中推动B原子扩散到MgO势垒中。
We have studied the boron (B) diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy depth analysis. A large concentration of B (B/Mg=0.16) was found to diffuse into the MgO barrier after 350 °C annealing. The boron in MgO is in a highly oxidized B3+ state and is homogenously distributed in the whole barrier. The important B diffusion in MgO could be related to the CoFeB crystallization process which begins from the under CoFeB/Ru interface and pushes boron atoms to diffuse into the MgO barrier during annealing.We have studied the boron (B) diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy depth analysis. A large concentration of B (B/Mg=0.16) was found to diffuse into the MgO barrier after 350 °C annealing. The boron in MgO is in a highly oxidized B3+ state and is homogenously distributed in the whole barrier. The important B diffusion in MgO could be related to the CoFeB crystallization process which begins from the under CoFeB/Ru interface and pushes boron atoms to diffuse into the MgO barrier during annealing.