Growing indium antimonide single crystals with a diameter of 100 mm by the modified Chochralsky method
Growing indium antimonide single crystals with a diameter of 100 mm by the modified Chochralsky method
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采用改进的 Chochralsky 法生长直径 100 mm 的锑化铟单晶
DOI：
10.17073/1609-3577-2021-3-190-198
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
E. Zhuravlev
中科院分区：
文献类型：
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作者：
R. Kozlov;S. S. Kormilitsina;E. V. Molodtsova;E. Zhuravlev
目前，在全世界范围内，存在增大元素半导体和半导体化合物的单晶的直径的趋势。有报告指出使用直径为4至6英寸的III-V族半导体单晶。迄今为止，在俄罗斯已经获得了直径达75毫米的锑化铟单晶。锑化铟是最广泛的固态电子学领域-光电子学的元素基础。在此基础上，制作了线性和矩阵光电探测器，工作在3 - 5微米的光谱波长范围内，用作热成像系统中的观察元件。在这项工作中，我们选择了热生长条件，获得了晶体方向上直径为100 mm的锑化铟单晶[100]。这个问题的解决使得有可能显着提高合适的光电探测器的产量。单晶体直径为100毫米的生长中的两个阶段的过程中的Czochralski方法。将石墨加热单元的设计进行了放大，并与直径为150 mm、负载为4. 5 - 5 kg的工作坩埚相匹配。采用货车德堡法测量所得单晶的电性能，其对应于未掺杂锑化铟的标准参数。使用光学显微镜，使用9视野法对蚀刻坑进行计数。直径为100 mm的晶体中的位错密度≤ 100 cm-2，与直径为50 mm的晶体的值相对应。
At present, all over the world there is a tendency to increase the diameters of single crystals of both elementary semiconductors and semiconductor compounds. There are reports indicating the use of single crystals of III-V semiconductors with a diameter of four to six inches. So far, indium antimonide single crystals up to 75 mm in diameter have been obtained in Russia.Indium antimonide is the element base of the broadest field of solid-state electronics — optoelectronics. On its basis, linear and matrix photodetectors are manufactured, operating in the spectral wavelength range of 3-5 microns, which are used as a viewing element in thermal imaging systems.In this work, we selected the thermal growth conditions and obtained indium antimonide single crystals 100 mm in diameter in the crystallographic direction [100]. The solution of this problem has made it possible to significantly increase the yield of suitable photodetectors.Single crystals 100 mm in diameter were grown by the Czochralski method in a two-stage process. The design of the graphite heating unit was enlarged and matched to a working crucible with a diameter of 150 millimeters and a load of 4.5-5 kg.The Van der Pauw method was used to measure the electrical properties of the obtained single crystals, which corresponded to the standard parameters of undoped indium antimonide. Using an optical microscope, the etching pits were counted using the 9-field method. The dislocation density in crystals with a diameter of 100 mm was ≤ 100 cm-2 and corresponded to the values for crystals of 50 mm.