Quantitative investigation of the O2+‐induced topography of GaAs and other III–V semiconductors: An STM study of the ripple formation and suppression of the secondary ion yield change by sample rotation
Quantitative investigation of the O2+‐induced topography of GaAs and other III–V semiconductors: An STM study of the ripple formation and suppression of the secondary ion yield change by sample rotation
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GaAs 和其他 III-V 半导体的 O2+ 诱导形貌的定量研究：通过样品旋转对波纹形成和二次离子产额变化抑制的 STM 研究
DOI：
10.1002/sia.740230710
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发表时间：
1995
影响因子：
1.7
通讯作者：
A. Ishitani
中科院分区：
文献类型：
--
作者：
A. Karen;Y. Nakagawa;M. Hatada;K. Okuno;F. Soeda;A. Ishitani
通过扫描隧道显微镜（STM）定量研究了砷化镓的粗化过程，包括o2 +诱导的波纹形成的早期阶段。利用STM图像的快速傅里叶变换对形貌发展开始的详细检查表明，波纹的形成不是由衬底上的任何偶然缺陷、颗粒或原始不规则引起的，而仅仅是由离子束的条件引起的。对不同o2 +轰击条件下产生的波纹状GaAs表面进行了系统的研究。波纹波长和跃迁深度几乎与exp cos θ成正比，其中exp和θ分别为离子束的能量和入射角。对于砷化镓，当入射o2 +光束的波纹斜率与宏观表面达到20-30°的饱和角时，二次离子产率发生跃迁。其他III-V型半导体的形貌变化也进行了比较。GaP未观察到波纹产生；InP呈波纹状结构，二次离子产率无变化。与砷化镓相比，砷化镓和砷化铟在较浅的深度形成了相对粗糙的表面。即使在基于磁扇区的仪器中，也可以通过样品旋转成功地抑制深度剖面中的涟漪和离子产额变化。
Roughening procedures including the early stage of the O 2 + -induced ripple formation of GaAs were studied quantitatively by scanning tunnelling microscopy (STM). Detailed examinations of the beginning of topography development using fast Fourier transform of the STM images revealed that the ripple formation was not caused by any accidental defects, particles or original irregularity on the substrate, but solely by the conditions of the ion beam. A systematic investigation of the rippled GaAs surface produced under various O 2 + bombardment conditions was conducted. The ripple wavelength and the transition depth were almost exactly proportional to E P cos θ, where E P and θ are the energy of the ion beam and the incident angle, respectively. For GaAs, the secondary ion yield transition occurs when the slope of ripples facing the incident O 2 + beam reaches a saturation angle of 20-30° from the macroscopic surface plane. Topography change on other III-V semiconductors was also examined for comparison. There was no ripple generation observed for GaP; InP gave a ripple-like structure without secondary ion yield change. A relatively rough surface resulted on GaSb and InAs at a much shallower depth than for GaAs. Rippling and ion yield changes during depth profiling have been suppressed successfully by sample rotation even in a magnetic sector-based instrument.