Considerations for further scaling of metal-insulator-metal DRAM capacitors
Considerations for further scaling of metal-insulator-metal DRAM capacitors
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进一步缩小金属-绝缘体-金属 DRAM 电容器的考虑因素
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
M. Jurczak
中科院分区：
文献类型：
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作者：
B. Kaczer;S. Clima;K. Tomida;B. Govoreanu;M. Popovici;Min;J. Swerts;A. Belmonte;W. Wang;V. Afanas’ev;A. Verhulst;G. Pourtois;G. Groeseneken;M. Jurczak
有效的电子隧穿质量mtunnel提取自陷阱辅助的金属-绝缘体-金属（MIM）电容器中的富锶钛酸锶和金红石型氧化钛薄膜中的泄漏，并与从第一原理计算的虚带结构的理论值进行比较。最佳取向的薄膜和化学计量影响mtunnel进行了讨论。由于未来的垂直DRAM集成方案还规定了MIM电容器的最大厚度，因此mtunnel被证明是影响本征泄漏并可能限制进一步缩放的关键参数。
Effective electron tunneling mass mtunnel is extracted from trap-assisted leakage in Sr-rich strontium titanate and rutile titanium oxide films in metal–insulator–metal (MIM) capacitors and compared with theoretical values obtained from first principles calculations of the imaginary band structure. Optimum orientations of films and stoichiometry impacting mtunnel are also discussed. Because future vertical DRAM integration schemes also stipulate maximum thickness of the MIM capacitor, mtunnel is shown to be a critical parameter influencing intrinsic leakage and potentially limiting further scaling.