A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes
A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes
复制标题
基于缺陷的 3C-SiC-on-Si 肖特基势垒二极管势垒高度行为模型
DOI：
10.1109/jestpe.2019.2942714
复制
发表时间：
2020
影响因子：
5.5
通讯作者：
N. Lophitis
中科院分区：
文献类型：
--
作者：
A. Arvanitopoulos;M. Antoniou;Mike Jennings;S. Perkins;K. Gyftakis;P. Mawby;N. Lophitis
硅（Si）衬底上的3C-SiC（3C-SiC-on-Si）肖特基势垒二极管（SBD）已经被发现遭受过大的亚阈值电流，尽管3C-SiC具有上级电特性。这也是阻碍这项技术商业化的因素之一。这些器件的正向电流-电压（$I$ - $V$）特性携带了有关材料质量的大量信息。在这种情况下，先进技术的计算机辅助设计（TCAD）模型，提出和验证的测量从制造和表征铂/3C-SiC-on-Si SBD的范围，以阐明物理载流子传输机制，陷阱的影响，以及它们的特性对实际器件性能。该模型包括源于肖特基接触和3C-SiC与Si的异质界面的缺陷，这允许调查它们对亚阈值电流的放大的影响。此外，模拟结果和测量数据允许识别的界面状态，其效果与所观察到的势垒高度值的不均匀性。因此，实现了全面表征的缺陷影响的载流子输运机制的研究3C-SiC-on-Si功率二极管，和建议的TCAD模型是能够准确地预测在正向和反向偏置条件下的设备电流。
3C-silicon carbide (3C-SiC) Schottky barrier diodes (SBDs) on silicon (Si) substrates (3C-SiC-on-Si) have been found to suffer from excessive subthreshold current, despite the superior electrical properties of 3C-SiC. In turn, that is one of the factors deterring the commercialization of this technology. The forward current–voltage ( $I$ – $V$ ) characteristics in these devices carry considerable information about the material quality. In this context, an advanced technology computer-aided design (TCAD) model is proposed and validated with measurements obtained from a fabricated and characterized platinum/3C-SiC-on-Si SBD with scope to shed light on the physical carrier transport mechanisms, the impact of traps, and their characteristics on the actual device performance. The model includes defects originating from both the Schottky contact and the heterointerface of 3C-SiC with Si, which allows the investigation of their impact on the magnification of the subthreshold current. Furthermore, the simulation results and measured data allowed for the identification of additional distributions of interfacial states, the effect of which is linked to the observed nonuniformities of the Barrier height value. A comprehensive characterization of the defects affecting the carrier transport mechanisms of the investigated 3C-SiC-on-Si power diode is thus achieved, and the proposed TCAD model is able to accurately predict the device current both during forward and reverse bias conditions.