Phase transition and anomalous scaling in the quantum Hall transport of topological-insulator Sn-Bi1.1Sb0.9Te2S devices
Phase transition and anomalous scaling in the quantum Hall transport of topological-insulator Sn-Bi1.1Sb0.9Te2S devices
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拓扑绝缘体 Sn-Bi1.1Sb0.9Te2S 器件量子霍尔传输中的相变和反常尺度
DOI：
10.1103/physrevb.99.081113
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发表时间：
2019
影响因子：
3.7
通讯作者：
Song Fengqi
中科院分区：
文献类型：
--
作者：
Xie Faji;Zhang Shuai;Liu Qianqian;Xi Chuanying;Kang Ting-Ting;Wang Rui;Wei Boyuan;Pan Xing-Chen;Zhang Minhao;Fei Fucong;Wang Xuefeng;Pi Li;Yu Geliang L.;Wang Baigeng;Song Fengqi
考虑了具有平台精度的优化拓扑绝缘体中量子霍尔输运的尺度物理。在温度相关输运耗散中观察到两种指数尺度，其中一种符合热激活行为，其间隙为2.8 meV (>20 K)，另一种归因于变范围跳变（1-20 K）。磁场驱动的高原到高原跃迁给出了具有一致指数κ ~ 0.2的标度关系，这是传统二维电子气体通用值的一半。这是量子隧穿辅助渗透的证据，揭示了拓扑表面态的电子-电子相互作用的优势。
The scaling physics of quantum Hall transport in optimized topological insulators with a plateau precision ofis considered. Two exponential scaling regimes are observed in temperature-dependent transport dissipation, one of which accords with thermal-activation behavior with a gap of 2.8 meV (>20 K), the other being attributed to variable-range hopping (1–20 K). Magnetic-field-driven plateau-to-plateau transition gives scaling relations ofandwith a consistent exponent ofκ∼ 0.2, which is half the universal value for a conventional two-dimensional electron gas. This is evidence of percolation assisted by quantum tunneling and reveals the dominance of electron-electron interaction of the topological surface states.