Coulomb staircase in STM current through granular films
Coulomb staircase in STM current through granular films
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DOI：
10.1103/physrevb.61.46
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发表时间：
2000-01-01
影响因子：
3.7
通讯作者：
Fujimori, H
中科院分区：
文献类型：
--
作者：
Imamura, H;Chiba, J;Fujimori, H
从理论和实验两方面研究了由扫描隧道显微镜针尖和颗粒膜组成的结阵列中的隧穿电流。当针尖与表面颗粒之间的隧道电阻远大于颗粒之间的隧道电阻时，在阵列中产生了隧道电流的瓶颈，室温下的I-V曲线出现了库仑阶梯（CS）。结果表明，即使颗粒膜由许多具有不同电容的隧道结组成，CS的周期也由瓶颈处的电容给出。我们的研究为在室温下制备单电子自旋电子器件提供了可能。
The tunneling current through a junction array consisting of a scanning tunneling microscope tip and a granular film is studied both theoretically and experimentally. When the tunnel resistance between the tip and a granule on the surface is much larger than those between granules, a bottleneck of the tunneling current is created in the array and the Coulomb staircase (CS) appears in the I-V curve at room temperature. It is shown that the period of the CS is given by the capacitance at the bottleneck even though a granular film consists of many tunnel junctions with different capacitances. Our study provides a possibility for single-electron-spin-electronic devices at room temperature.