Fabrication of electroless NiReP barrier layer on SiO2 without sputtered seed layer
Fabrication of electroless NiReP barrier layer on SiO2 without sputtered seed layer
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无溅射晶种层的 SiO2 上化学镀 NiReP 阻挡层的制备
DOI：
10.1149/1.1421747
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发表时间：
2002
影响因子：
--
通讯作者：
K. Ueno
中科院分区：
文献类型：
--
作者：
T. Osaka;N. Takano;T. Kurokawa;K. Ueno
针对超大规模集成应用，提出了一种在 SiO 2 上化学沉积 NiReP 阻挡层的新制造工艺。 NiReP 薄膜是通过利用自组装单层 (SAM) 作为粘附层和催化剂层，在没有溅射晶种的情况下无电镀形成的。对于覆盖有SAM的SiO 2 层上的化学沉积，酸性或中性化学沉积浴是合适的，而碱性溶液会损坏SiO 2 表面。为了在SAM/SiO 2 表面上制造一致均匀的阻挡膜，提出了两步工艺，包括在酸性无电沉积浴中进行的成核步骤和在碱性浴中进行的阻挡层形成步骤。两步工艺取得了令人满意的结果，并且在高pH浴中在SAM/SiO 2 表面成功形成了化学镀NiReP阻挡层。
A new fabrication process for an electrolessly deposited NiReP barrier layer on SiO 2 is proposed for ultralarge scale integration applications. The NiReP film was formed electrolessly without sputtered seeds by utilizinga self-assembled monolayer (SAM) as an adhesion and catalyst layer. For the electroless deposition on the SiO 2 layer covered with SAM, an acid or a neutral electroless deposition bath was suitable whereas an alkaline solution damaged the SiO 2 surface. To fabricate a consistently uniform barrier film on the SAM/SiO 2 surface, a two-step process, consisting of a nucleation step performed in an acid electroless deposition bath and a barrier layer formation step carried out in an alkaline bath, is proposed. The two-step process yielded satisfactory results, and the electroless NiReP barrier layer was successfully formed on the SAM/SiO 2 surface in a high pH bath.