Macropore formation on p‐type multicrystalline silicon and solar cells

Macropore formation on p‐type multicrystalline silicon and solar cells
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p型多晶硅和太阳能电池上大孔的形成

DOI:
10.1002/pssa.200306463
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发表时间:
2003
期刊:
Physica Status Solidi (a)
影响因子:
--
通讯作者:
D. Sarti
D. Sarti
中科院分区:
--
文献类型:
--
作者:
C. Lévy‐Clément;S. Lust;S. Bastide;Q. N. Le;D. Sarti

文献摘要

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通过系统研究中掺杂多晶硅(100)和(111)晶面的大孔形貌与多孔刻蚀参数和硅掺杂的关系,推导出中掺杂多晶硅大孔形成的条件。提出了一种新的多晶硅表面织构化方法,该方法可使多晶硅表面形成有效反射率低于9%的大孔结构。大孔多晶硅太阳能电池具有大于13.5%的高效率。
Conditions of macropore formation on multicrystalline medium doped silicon were deduced from a systematic study of the macroporous morphology of (100) and (111) oriented monocrystalline silicon in function of the porous etching parameters and silicon doping. A new promising method to texturize the surface of multicrystalline silicon wafers has been developed which leads to a macroporous surface with a very low effective reflectivity ∼9%. Macroporous multicrystalline silicon solar cells exhibit high efficiency larger than 13.5%.