The residual C concentration control for low temperature growth p-type GaN
The residual C concentration control for low temperature growth p-type GaN
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低温生长p型GaN的残余C浓度控制
DOI：
10.1088/1674-1056/26/10/107102
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发表时间：
2017
影响因子：
1.7
通讯作者：
Zhang Li-Qun
中科院分区：
文献类型：
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作者：
Liu Shuang-Tao;Zhao De-Gang;Yang Jing;Jiang De-Sheng;Liang Feng;Chen Ping;Zhu Jian-Jun;Liu Zong-Shun;Li Xiang;Liu Wei;Xing Yao;Zhang Li-Qun
本文研究了碳浓度对低温生长p-GaN性能的影响。通过分析，我们证实了C杂质对p-GaN的补偿作用。同时发现：(1)C浓度随生长压力的增加而降低；(2)改变Cp2 Mg流量时存在Ga记忆效应，导致生长速率和C浓度随Cp2 Mg流量的增加而增加；(3)金属-有机化学气相沉积(MOCVD)外退火可降低C浓度，而MOCVD内原位退火对C浓度有固定作用。
In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied. Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the residual C concentration: (i) the C concentration decreases with the increase of growth pressure; (ii) we have found there exists a Ga memory effect when changing the Cp2Mg flow which will lead the growth rate and C concentration increase along the increase of Cp2Mg flow; (iii) annealing outside of metal–organic chemical vapor deposition (MOCVD) could decrease the C concentration while in situ annealing in MOCVD has an immobilization role to C concentration.