SiGe HBT modeling for mm-wave circuit design
SiGe HBT modeling for mm-wave circuit design
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DOI：
10.1109/bctm.2015.7340560
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发表时间：
2015-12
期刊：
影响因子：
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通讯作者：
A. Pawlak;S. Lehmann;P. Sakalas;J. Krause;K. Aufinger;B. Ardouin;M. Schroter
中科院分区：
文献类型：
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作者：
A. Pawlak;S. Lehmann;P. Sakalas;J. Krause;K. Aufinger;B. Ardouin;M. Schroter
DOTSEVEN项目中的紧凑建模活动的概述。如几何尺寸缩放，衬底耦合和热效应，以及EQUIUM 2级功能，使最新一代的SiGe HBT的线性和非线性特性的准确建模的问题进行了讨论。此外，最重要的直流和小信号特性的实验结果，以及从两种不同的技术的最先进的SiGe HBT的非线性建模的选定的例子。简要讨论了与有限的片上高频测量能力和数百GHz精确校准相关的模型验证问题。
An overview on the compact modeling activities within the DOTSEVEN project is given. Issues such as geometry scaling, substrate coupling and thermal effects as well as HICUM Level 2 features enabling the accurate modeling of the linear and non-linear characteristics of the latest generation of SiGe HBTs are discussed. Furthermore, experimental results for the most important DC and small-signal characteristics as well as selected examples for non-linear modeling of the most advanced SiGe HBTs from two different technologies are presented. Model verification issues related to limited on-wafer high-frequency measurement capability and the accurate calibration at multi-hundred GHz are briefly touched.