A CMOS integrated three-axis accelerometer fabricated with commercial submicrometer CMOS technology and bulk-micromachining
A CMOS integrated three-axis accelerometer fabricated with commercial submicrometer CMOS technology and bulk-micromachining
复制标题
采用商用亚微米 CMOS 技术和体微加工技术制造的 CMOS 集成三轴加速度计
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
M. Ishida
中科院分区：
文献类型：
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作者：
H. Takao;H. Fukumoto;M. Ishida
为了实现低成本的智能加速度传感器和提高器件性能，本文提出了一种采用商用亚微米CMOS晶片制作的体硅微机械三轴加速度传感器。三轴检测的信号处理电路使用商业0.8-/spl μ/m CMOS技术形成。之后，对完整的CMOS晶片进行微机械加工以形成加速度计结构。将微机械加工工艺与CMOS工艺分开的重要技术是CMOS制造后的晶片厚度控制和使用化学旋转蚀刻的背面抛光。利用该工艺制作了3/spl times/3 mm/sup 2/和6/spl times/6 mm/sup 2/芯片尺寸的加速度计。作为器件评价的结果，使用6/spl times/6 mm/sup 2/芯片尺寸的加速度计获得了2.0 mg/sub rms/分辨率的Z轴加速度以及10.8 mg/sub rms/分辨率的X和Y轴加速度。在相同的芯片面积下，该加速度计的Z轴加速度分辨率和X、Y轴加速度分辨率分别是采用5.0-/spl μ/mCMOS工艺制作的三轴加速度计的21.3倍和37.8倍。还评估了重复振动载荷的温度依赖性和可靠性。通过这些评估，CMOS集成三轴加速度计的基本性能得到了确认。
In this paper, a bulk-micromachined three-axis accelerometer fabricated with commercial submicrometer CMOS wafers has been developed for low-cost realization of smart accelerometers and improvement of device performance. The signal processing circuits for three-axis detection were formed using a commercial 0.8-/spl mu/m CMOS technology. After that, micromachining processes were performed to the complete CMOS wafers to form accelerometer structures. The important technologies to separate micromachining processes from the CMOS process are wafer thickness control after CMOS fabrication and backside polishing with chemical spin etching. Accelerometers with 3/spl times/3 mm/sup 2/ and 6/spl times/6 mm/sup 2/ die size were fabricated with the developed fabrication technology. As a result of device evaluation, 2.0 mg/sub rms/ resolution of Z-axis acceleration, and 10.8 mg/sub rms/ resolution of X and Y-axis acceleration were obtained by the accelerometers with 6/spl times/6 mm/sup 2/ die size. Comparing for the same die area, the 6/spl times/6 mm/sup 2/ size accelerometer showed about 21.3 times higher resolution of Z-axis acceleration and 37.8 times higher resolution of X, Y-axis acceleration as compared to our previous three-axis accelerometer fabricated with 5.0-/spl mu/m CMOS technology. Temperature dependence and reliability for repetitive vibration loads were also evaluated. Through these evaluations, basic performance of the CMOS integrated three-axis accelerometer has been confirmed.