Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO 2 /Si interfaces with low defect densities
Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO 2 /Si interfaces with low defect densities
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DOI：
10.1016/j.apsusc.2016.06.090
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发表时间：
2017-02
影响因子：
6.7
通讯作者：
B. Stegemann;K. M. Gad;P. Balamou;Daniel Sixtensson;D. Vossing;M. Kasemann;H. Angermann
中科院分区：
文献类型：
--
作者：
B. Stegemann;K. M. Gad;P. Balamou;Daniel Sixtensson;D. Vossing;M. Kasemann;H. Angermann
分析、评价和比较了六种先进氧化技术在晶体硅上制备高质量超薄氧化层的效果。由此产生的电子和化学SiO2/Si界面特性，确定由相结合的X射线光电子能谱（XPS）和表面光电压（SPV）的调查。取决于氧化技术，化学突变SiO2/Si界面与低密度的界面态在C-Si上制造，无论是在低温下，在短时间内，或在湿化学环境中，在每种情况下，在良好的界面钝化。此外，已经证明了随后的合成气体退火（FGA）步骤对超薄氧化物层的SiO2/Si界面钝化的有益效果。化学突变的SiO2/Si界面已被证明产生较少的界面缺陷态。
Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO2/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface photovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO2/Si interfaces with low densities of interface states were fabricated on c-Si either at low temperatures, at short times, or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, the beneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO2/Si interface of ultra-thin oxide layers has been proven. Chemically abrupt SiO2/Si interfaces have been shown to generate less interface defect states.