Fabrication and characterization of high-purity germanium detectors with amorphous germanium contacts
Fabrication and characterization of high-purity germanium detectors with amorphous germanium contacts
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DOI：
10.1088/1748-0221/14/02/p02019
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发表时间：
2019-02-01
影响因子：
1.3
通讯作者：
Mei, D-M
中科院分区：
文献类型：
--
作者：
Meng, X-H;Wang, G-J;Mei, D-M
大型高纯度锗（HPGe）探测器是无中微子双β衰变和暗物质实验所必需的。目前，在南达科他州大学（USD）可以生长大的（直径>4英寸）HPGe晶体。我们验证生长的晶体的质量是足够的，用于大型探测器制造和表征较小的HPGe探测器由这些晶体。我们报告的结果，从八个探测器制造超过六个月，使用晶体生长在USD。非晶锗（a-Ge）接触用于阻挡电子和空穴。两种类型的几何形状被用来制造HPGe探测器。因此，在USD的小型平面探测器的制造过程中进行了详细的讨论。针对8个探测器分析了程序和几何结构对探测器性能的影响。我们通过测量泄漏电流，电容和能量分辨率在662千电子伏的Cs-137源，其特征在于检测器。四个探测器均表现出良好的性能，表明USD生长的晶体适合制作HPGe探测器。
Large, high-purity, germanium (HPGe) detectors are needed for neutrinoless double-beta decay and dark matter experiments. Currently, large (>4 inches in diameter) HPGe crystals can be grown at the University of South Dakota (USD). We verify that the quality of the grown crystals is sufficient for use in large detectors by fabricating and characterizing smaller HPGe detectors made from those crystals. We report the results from eight detectors fabricated over six months using crystals grown at USD. Amorphous germanium (a-Ge) contacts are used for blocking both electrons and holes. Two types of geometry were used to fabricate HPGe detectors. As a result, the fabrication process of small planar detectors at USD is discussed in great detail. The impact of the procedure and geometry on the detector performance was analyzed for eight detectors. We characterized the detectors by measuring the leakage current, capacitance, and energy resolution at 662 keV with a Cs-137 source. Four detectors show good performance, which indicates that crystals grown at USD are suitable for making HPGe detectors.