Electronic Structure of Novel Superconductor doped-ZrPSe
Electronic Structure of Novel Superconductor doped-ZrPSe
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DOI:
10.1088/1742-6596/1590/1/012008
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发表时间:
2020-07
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影响因子:
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通讯作者:
I. Hase;T. Yanagisawa;H. Kito;K. Iwakiri;T. Nishio;H. Fujihisa;Y. Gotoh;H. Eisaki;K. Kawashima
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文献类型:
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作者:
I. Hase;T. Yanagisawa;H. Kito;K. Iwakiri;T. Nishio;H. Fujihisa;Y. Gotoh;H. Eisaki;K. Kawashima
In this paper we report the results of the first-principles calculations for cation and anion co-doped system (Zr1-yYy)P(As0.25Se0.75) using virtual crystal approximation. The density of states at the Fermi level (=D(EF)) shows a dome-shape with respect to the doping concentration y. This result qualitatively explains the observed y dependence of T c, especially for (Zr1-yYy)P1.25Se0.75. We also found the similarity of the band structure between ZrSiS and doped-ZrPSe. Characteristic band crossing near E-g, which is found to be the Dirac line node in ZrSiS, is also found in doped-ZrPSe. This result strongly suggests that the superconductivity and the Dirac line node are co-existed in doped-ZrPSe.