Imaging plate technique for determination of tritium distribution on graphite tiles of JT-60U
Imaging plate technique for determination of tritium distribution on graphite tiles of JT-60U
复制标题
JT-60U石墨瓦上氚分布测定的成像板技术
DOI：
10.1016/s0022-3115(02)01068-1
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发表时间：
2002
影响因子：
3.1
通讯作者：
N. Miya
中科院分区：
文献类型：
--
作者：
T. Tanabe;K. Miyasaka;K. Masaki;K. Kodama;N. Miya
利用氚成像板技术测量了JT-60 U装置中第一壁和W型偏滤器石墨瓦表面的氚分布，其中等离子体中D-D核反应产生的氚根据入射能量注入和/或沉积在石墨瓦上。测量的样品是各向同性石墨（IG-430 U）和CFC石墨（CX-2002 U），用作偏滤器瓦片和/或偏滤器外部的挡板。首次成功地测量了JT-60 U石墨偏滤器瓦、整流罩和隔板上的氚面分布。在JT-60 U瓦中观察到的氚分布可以解释为高能氚的均匀注入，其受再沉积层的影响，并且由于等离子体热负荷而引起的温度增加而重新分布。加热到800 K以上的石墨中的氚保留量明显小。
The tritium imaging plate technique was applied to determine surface tritium distributions on graphite tiles used as the first wall and W-shaped divertor in JT-60U, in which tritium produced by the D–D nuclear reaction in the plasma was implanted and/or deposited depending on the incident energy. Measured samples were isotropic graphite (IG-430U) and CFC graphite (CX-2002U), used as divertor tiles and/or baffle plates just outside the divertor. Tritium areal distributions on graphite divertor tiles, dome units and baffle plates of JT-60U were successfully measured for the first time. Tritium distributions observed in JT-60U tiles can be explained by homogeneous implantation of high energy tritium which is influenced by redeposited layers and redistributed by the temperature increase due to the plasma heat load. The tritium retention in graphite heated above 800 K was significantly small.