Ion Implantation of Graphene-Toward IC Compatible Technologies
Ion Implantation of Graphene-Toward IC Compatible Technologies
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DOI：
10.1021/nl402812y
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发表时间：
2013-10-01
期刊：
影响因子：
10.8
通讯作者：
Hofsaess, H.
中科院分区：
文献类型：
--
作者：
Bangert, U.;Pierce, W.;Hofsaess, H.
通过低能离子注入掺杂石墨烯，可以为制造纳米尺度的图像化石墨烯器件以及与大规模集成半导体技术兼容的石墨烯功能化提供可能性。利用先进的电子显微镜/光谱学方法，我们首次直接证明石墨烯可以通过离子注入掺杂B和N，并且保留率与基于计算的文献值的预测非常一致。原子分辨率高角度暗场成像（HAADF）结合单原子电子能量损失（EEL）光谱显示，在足够低的注入能量下，离子主要被取代地结合到石墨烯晶格中，而极小部分存在于缺陷相关的位置。
Doping of grapheme via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.