Self-Assembled Porphyrins on Modified Zinc Oxide Nanorods : Development of Model Systems for Inorganic-Organic Semiconductor Interface Studies, H. Saarenpaa, E. Sariola-Leikas, A. Pyymaki-Perros

Self-Assembled Porphyrins on Modified Zinc Oxide Nanorods : Development of Model Systems for Inorganic-Organic Semiconductor Interface Studies, H. Saarenpaa, E. Sariola-Leikas, A. Pyymaki-Perros
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改性氧化锌纳米棒上的自组装卟啉:无机-有机半导体界面研究模型系统的开发,H. Saarenpaa、E. Sariola-Leikas、A. Pyymaki-Perros

DOI:
10.1021/jp2104769
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发表时间:
2012
期刊:
影响因子:
3.7
通讯作者:
and N. V. Tkachenko
and N. V. Tkachenko
中科院分区:
化学3区
文献类型:
--
作者:
J. Kontio;A. Efimov;H. Hayashi;H. Lipsanen;H. Imahori;H. Lemmetyinen;and N. V. Tkachenko

文献摘要

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用水热法生长了致密的高比表面积的氧化锌纳米棒阵列,并用卟啉自组装单分子膜(SAM)对其进行功能化处理。优化了生长工艺,得到了直径为60~80 nm、长度可达1.5μm的致密纳米棒阵列,通过比较沉积在平坦和纳米棒表面的自组装膜的吸光度来监测有效表面积的增加。为了进一步改变半导体-有机SAM相互作用,在氧化锌纳米棒上沉积了2或5 nm厚的氧化铝或二氧化钛层。结果表明,羧酸和三乙氧基硅烷均可在所研究的金属氧化物衬底上形成卟啉自组装膜,并且金属氧化物与卟啉自组装膜之间的电子相互作用被一层薄薄的氧化铝或二氧化钛强烈修饰。这些半导体-有机混合SAM结构为半导体-有机界面的高级光谱研究提供了很有前途的模型系统,具有对电子相互作用和系统形态的高度控制。
Dense arrays of zinc oxide nanorods with high specific surface areas were grown by hydrothermal method and functionalized by self-assembled monolayer (SAM) of porphyrins. The growth process was optimized to obtain dense arrays of nanorods with diameter of 60–80 nm and length up to 1.5 μm. The increase in the effective surface area was monitored by comparing the absorbances of SAM deposited both on the flat and nanorod surfaces of ZnO. To alter further semiconductor-organic SAM interactions, a 2 or 5 nm thick layer of either Al2O3or TiO2was deposited on the ZnO nanorods. The present results show that both carboxylic acid and triethoxysilane anchors can be used to form porphyrin SAMs on the studied metal oxide substrates, and the electronic interactions between the metal oxide and porphyrin SAM are strongly modified by a thin layer of Al2O3or TiO2. These hybrid semiconductor-organic SAM constructions present promising model systems for advanced spectroscopy studies of semiconductor-organic interfaces with high degree of control over electronic interactions and system morphology.