Far-infrared and capacitance measurements of electrons on liquid helium
Far-infrared and capacitance measurements of electrons on liquid helium
复制标题
液氦上电子的远红外和电容测量
DOI：
10.1103/physrevb.23.3282
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发表时间：
1981
影响因子：
3.7
通讯作者：
P. Richards
中科院分区：
文献类型：
--
作者：
D. K. Lambert;P. Richards
我们用远红外激光光谱技术研究了液氦表面附近势垒中束缚态之间的电子跃迁。测量的数据作为表面电荷密度的函数被用来推断表面电子的局部位置无序，正如最近的一封信中所报道的那样。在低表面电荷密度和高电场条件下的测量结果与气液界面模型进行了比较。电容测量和静电计算提供了表面电荷密度和施加电场的准确确定。这些计算表明，电荷只覆盖了部分液体表面。
We have used the techniques of far-infrared laser spectroscopy to study transitions of electrons between bound states in the potential well near a liquid-helium surface. Data measured as a function of surface charge density are used to deduce the local positional disorder of the surface electrons as was reported in a recent Letter. Measurements at low surface charge density and high electric fields are compared with models of the liquid-gas interface. Capacitance measurements and electrostatic calculations provide an accurate determination of the surface charge density and the applied electric field. These calculations show that the charge only covers part of the liquid surface.