Gaseous Catalyst Assisted Growth of Graphene on Silicon Carbide for Quantum Hall Resistance Standard Device
Gaseous Catalyst Assisted Growth of Graphene on Silicon Carbide for Quantum Hall Resistance Standard Device
复制标题
气态催化剂辅助碳化硅上石墨烯生长用于量子霍尔电阻标准器件
DOI：
10.1002/admt.202201127
复制
发表时间：
2022-12-04
影响因子：
6.8
通讯作者：
Wang, Haomin
中科院分区：
文献类型：
--
作者：
Chen, Lingxiu;Wang, HuiShan;Wang, Haomin
在碳化硅（SiC）上直接生长石墨烯是一种非常有前途的制备高质量石墨烯的方法。然而，SiC上的高质量单晶外延石墨烯膜总是在高于1800摄氏度的温度下形成。在此，报道了通过气相催化剂辅助化学气相沉积（CVD）法在约1300 ℃下在SiC的硅表面（0001）上合成石墨烯。由于SiC表面台阶的高度会影响石墨烯霍尔器件的性能，低温生长石墨烯有利于保持SiC表面台阶的高度，这可以通过生长前的预处理来实现。在SiC表面上制作的具有约0.5 nm小台阶高度的石墨烯量子霍尔电阻标准（G-QHRS）器件在B = 6 T和T = 4.5 K下测量量子电阻时，在7天内显示出1.15 × 10（-8）的精度和3.6 × 10（-9）的再现性。SiC上的气体催化剂辅助CVD是一种有效的可扩展生长方法，可以生产用于电阻计量的高质量石墨烯，并且它代表了朝着低磁场QHRS迈出的有希望的一步，为不久的将来的低成本和可运输QHRS奠定了基础。
Direct growth of graphene on silicon carbide (SiC) is a very promising method for preparing high-quality graphene. However, high quality single crystal epitaxial graphene films on SiC always form at a temperature higher than 1800 degrees C. Here, the synthesis of graphene on the silicon surface (0001) of SiC at approximate to 1300 degrees C by gaseous catalyst-assisted chemical vapor deposition (CVD) method is reported. As the step height of terraces on SiC surface can influence the performance of graphene Hall devices, low-temperature growth of graphene benefits for keeping the steps of the SiC surface at a small height, which can be achieved by a pre-treatment before growth. A graphene quantum Hall resistance standard (G-QHRS) device fabricated on the SiC surface with a small step height of approximate to 0.5 nm exhibits an accuracy of 1.15 x 10(-8) and a reproducibility of 3.6 x 10(-9) within 7 days in the measurement of quantum resistance at B = 6 T and T = 4.5 K. The gaseous catalyst-assisted CVD on SiC is an effective scalable growth approach that produces high-quality graphene for the resistance metrology, and it represents a promising step toward a low magnetic field QHRS setting the basis of low-cost and transportable QHRS in a near future.