Electric-field control of interfacial in-plane magnetic anisotropy in CoFeB/MgO junctions
Electric-field control of interfacial in-plane magnetic anisotropy in CoFeB/MgO junctions
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DOI：
10.1103/physrevb.101.174405
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发表时间：
2020-05-05
影响因子：
3.7
通讯作者：
Fukuma, Yasuhiro
中科院分区：
文献类型：
--
作者：
Deka, Angshuman;Rana, Bivas;Fukuma, Yasuhiro
金属/氧化物异质结构中的磁电耦合开启了通过电压控制磁化的可能性，即，电场然而，电场激发的磁化动力学在完美的面内和面外磁化膜尚未被证明到目前为止，由于垂直磁各向异性的电压控制产生的零电场转矩。这限制了电压控制的磁各向异性在磁化动力学的磁场自由控制中的应用。在这里，我们表明，磁退火可以诱导界面的CoFeB/MgO结的面内磁各向异性，从而控制界面磁各向异性的对称性。通过施加电压来调制磁各向异性：负偏置电压增加垂直磁各向异性，而正偏置电压降低垂直磁各向异性并增加面内磁各向异性。这种通过磁退火对界面磁各向异性的对称性的控制及其通过电场的可调谐性对于开发纯电压控制的自旋电子器件是有用的。
Magnetoelectric coupling in metal/oxide heterostructures has opened up the possibility of controlling magnetization by voltage, i.e., electric field. However, the electric-field excitation of magnetization dynamics in perfectly in-plane and out-of-plane magnetized films have not been demonstrated so far due to zero electric-field torque originating from voltage control of perpendicular magnetic anisotropy. This limits the application of voltage-controlled magnetic anisotropy in magnetic field free control of magnetization dynamics. Here we show that magnetic annealing can induce an interfacial in-plane magnetic anisotropy of CoFeB/MgO junctions, thereby controlling the symmetry of interfacial magnetic anisotropy. The magnetic anisotropy is modulated by applying voltage: a negative bias voltage increases perpendicular magnetic anisotropy, while a positive bias voltage decreases perpendicular magnetic anisotropy and increases the in-plane magnetic anisotropy. Such a control of symmetry of the interfacial magnetic anisotropy by magnetic annealing and its tunability by electric fields is useful for developing purely voltage-controlled spintronic devices.