Topological surface transport in epitaxial SnTe thin films grown on Bi2Te3
Topological surface transport in epitaxial SnTe thin films grown on Bi2Te3
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DOI：
10.1103/physrevb.89.121302
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发表时间：
2014-03-17
影响因子：
3.7
通讯作者：
Ando, Yoichi
中科院分区：
文献类型：
--
作者：
Taskin, A. A.;Yang, Fan;Ando, Yoichi
采用分子束外延技术在Bi_2Te_3缓冲层上外延生长了拓扑晶体绝缘体SnTe。在30 nm厚的SnTe薄膜中，发现p型和n型载流子共存，Shubnikov-de哈斯振荡数据表明，n型载流子是驻留在SnTe（111）表面上的狄拉克费米子。由于自由SnTe表面上的向下能带弯曲，这种在p型拓扑晶体绝缘体中的拓扑表面状态的传输观察成为可能，这似乎是内在的起源。
The topological crystalline insulator SnTe has been grown epitaxially on a Bi2Te3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p- and n-type carriers are found to coexist, and Shubnikov-de Haas oscillation data suggest that the n-type carriers are Dirac fermions residing on the SnTe (111) surface. This transport observation of the topological surface state in a p-type topological crystalline insulator became possible due to a downward band bending on the free SnTe surface, which appears to be of intrinsic origin.