Realization of InGaN laser diodes above 500 nm by growth optimization of the InGaN/GaN active region
Realization of InGaN laser diodes above 500 nm by growth optimization of the InGaN/GaN active region
复制标题
通过 InGaN/GaN 有源区的生长优化实现 500 nm 以上的 InGaN 激光二极管
DOI：
10.7567/apex.7.111001
复制
发表时间：
2014-11-01
影响因子：
2.3
通讯作者：
Yang, Hui
中科院分区：
文献类型：
--
作者：
Liu, Jianping;Li, Zengcheng;Yang, Hui
采用两步生长法在InGaN绿色LD结构中生长GaN量子垒。在与InGaN量子阱（QW）相同的温度下生长盖层，然后将温度升高约130摄氏度以生长GaN QB。研究了低温生长帽层对绿色LD结构光学特性和微结构的影响。结果表明，适当厚度的LT帽层可以提高InGaN量子阱的发光均匀性，抑制量子阱的热分解。实现了500 nm以上的C面脊波导半导体激光器。(C)2014日本应用物理学会
Two-step growth was employed to grow GaN quantum barriers (QBs) in InGaN green LD structures. A cap layer was grown at the same temperature as an InGaN quantum well (QW), and the temperature was then raised by around 130 degrees C to grow GaN QBs. The effects of low-temperature- grown cap (LT-cap) layers on the optical properties and microstructures of green LD structures were investigated. It was found that the LT-cap layer with an optimal thickness can improve the luminescence homogeneity and suppress the thermal decomposition of InGaN QWs. C-plane ridge waveguide laser diodes lasing above 500 nm were realized. (C) 2014 The Japan Society of Applied Physics