Backward deviation and depth recovery of load–displacement curves of amorphous SiC film under repeating nanoindentation
Backward deviation and depth recovery of load–displacement curves of amorphous SiC film under repeating nanoindentation
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重复纳米压痕下非晶SiC薄膜载荷-位移曲线的后向偏差和深度恢复
DOI：
10.1016/s1359-6454(03)00176-9
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发表时间：
2003
期刊：
影响因子：
9.4
通讯作者：
K. Nakasa
中科院分区：
文献类型：
--
作者：
T. D. Raju;Masahiko Kato;K. Nakasa
利用载荷-位移曲线研究了溅射非晶SiC薄膜在重复纳米压痕加载下的变形和分层行为。当穿透深度大于或小于薄膜厚度时，曲线向前发展，表示基材或薄膜的变形。另一方面，当穿透深度与膜厚相当时，在最小载荷附近观察到较大的向后偏差和深度恢复。原子力显微镜对压痕的观察证明，分层从压痕下方开始，向压痕肩部发展。这种行为与薄膜中存在较大的残余压应力密切相关。讨论了SiC薄膜与TiN、AlN薄膜分层行为的差异。
The deformation and delamination behaviors of sputtered amorphous SiC film have been studied from the load–displacement curves under repeated nanoindentation loading. When the penetration depth is either much larger or much smaller than the film thickness, the curve progresses in forward direction that represents the deformation of the substrate or film. On the other hand, when the penetration depth is comparable with the film thickness, large backward deviation and depth recovery around the minimum load are observed. Observation of the indents by an atomic force microscope proved that delamination starts from the portions beneath the indenter and progresses towards the shoulder of the indent. This behavior is strongly connected with the existing large residual compressive stress in the film. The difference in the delamination behaviors between SiC and TiN, AlN films is also discussed.