Hybrid-phase growth in microcrystalline silicon thin films deposited by plasma enhanced chemical vapor deposition at low temperatures
Hybrid-phase growth in microcrystalline silicon thin films deposited by plasma enhanced chemical vapor deposition at low temperatures
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DOI：
10.1063/1.1883720
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发表时间：
2005-04
影响因子：
3.2
通讯作者：
T. Sugano;T. Kitagawa;Y. Sobajima;T. Toyama;H. Okamoto
中科院分区：
文献类型：
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作者：
T. Sugano;T. Kitagawa;Y. Sobajima;T. Toyama;H. Okamoto
采用甚高频等离子体增强化学气相沉积法在180°C低温下制备了微晶硅（μc-Si）薄膜，利用X射线衍射和电子衍射测量对薄膜的厚度变化进行了研究。实验结果表明，μc-Si中的非晶相从上到下在整个区域内都向固相中的晶相转变，并且主要是向（220）取向的转变，并根据所提出的模型解释了这些生长现象，即：混合相生长模型由在表面的常规气相生长加上在膜中发生的固相结晶组成。此外，还讨论了混合相生长，特别是低温固相晶化，以及在不同衬底上、衬底温度为160-350°C、衬底温度为350°C时沉积的μc-Si膜的厚度变化。
Crystallographic studies on microcrystalline silicon (μc-Si) films, which were prepared by very-high-frequency plasma-enhanced chemical vapor deposition at a low temperature of 180°C, have been performed employing thickness evolutions of x-ray and electron diffraction measurements. The experimental results revealed that amorphous phase in μc-Si is transited to crystalline phase in solid phase in whole region from the top to the bottom, and the transition to the (220) orientation is dominantly found. These growth phenomena are interpreted in terms of a proposed model, i.e., the hybrid-phase growth model consisting of conventional vapor-phase growth at the surface plus the solid-phase crystallization occurring in the film. Moreover, the hybrid-phase growth, particularly solid-phase crystallization at low temperatures, is discussed in conjunction with the further results on the thickness evolutions associated with μc-Si films deposited on various underlayers or at substrate temperatures of 160–350°C, or at S...