Growth of GaAs, AlGaAs, and InGaAs on (111)B GaAs by molecular‐beam epitaxy
Growth of GaAs, AlGaAs, and InGaAs on (111)B GaAs by molecular‐beam epitaxy
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通过分子束外延在 (111)B GaAs 上生长 GaAs、AlGaAs 和 InGaAs
DOI：
10.1116/1.584376
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发表时间：
1988
影响因子：
1.4
通讯作者：
C. Fonstad
中科院分区：
文献类型：
--
作者：
K. Elcess;J. Liévin;C. Fonstad
报道了在垂直于[111]方向取向的GaAs衬底上通过分子束外延生长GaAs、AlGaAs和InGaAs的高质量外延层。发现GaAs的（111）B表面在其氧化物脱附后与（001）表面相比非常脆弱。表面粗糙化发生在氧化物脱附的几秒钟内，除非生长迅速开始。反射高能电子衍射研究还揭示了衬底表面发生的几种结构转变。重建是敏感的温度和砷通量。温度和通量范围导致二维，单层生长划定，这些信息被用来生长超晶格和量子威尔斯与光滑的界面。无应变晶格匹配层和应变赝晶层都已生长。
The growth by molecular‐beam epitaxy of high‐quality epitaxial layers of GaAs, AlGaAs, and InGaAs on GaAs substrates oriented normal to the [111] direction is reported. The (111)B surface of GaAs is found, in contrast to the (001) surface, to be extremely fragile after the desorption of its oxide. Surface roughening occurs within seconds of oxide desorption unless growth is initiated promptly. Reflection high‐energy electron diffraction studies also reveal several structural transformations occurring on the surface of the substrate. The reconstructions are sensitive to the temperature and to the arsenic flux. Temperature and flux ranges leading to two‐dimensional, monolayer growth are delineated, and this information is used to grow superlattices and quantum wells with smooth interfaces. Both unstrained lattice‐matched and strained pseudomorphic layers have been grown.